Semiconductor Blankmask Category Specification Substrate Size 6 x 6 x 0.25 inch Transmittance Not less than 85 % @ 200 nm Not less than 90 % @ 230~260nm Shielding Layer Thickness 660 ~ 1000 Å Optical Density 2.9 ~ 3.0 @ exposed warelength Reflectance ≥ 20 % @ exposed warelength Defect None ≥ 0.5 ㎛ Resist E-beam Resist Thickness 3000 ~ 4000 Å Optic Resist Thickness 4650 Å FPD Blankmask Category Specification Substrate Size 330 x 450 x 6 mm ~ 1220 x 1400 x 13 mm Transmittance Not less than 85 % @ 200 nm Not less than 90 % @ 230 ~ 260nm Shielding Layer Thickness 1100 ± 50 Å Optical Density ≥ 3.0 @ exposed warelength Reflectance ≥ 20 % @ exposed warelength Defect None ≥ 30 ㎛ Resist E-beam Resist Thickness 3000 ~ 4000 Å Optic Resist Thickness 10000 Å