Semiconductor Blankmask
Category
Specification
Substrate
Size
6 x 6 x 0.25 inch
Transmittance
Not less than 85 % @ 200 nm
Not less than 90 % @ 230~260nm
Shielding Layer Thickness
660 ~ 1000 Å
Optical Density 2.9 ~ 3.0 @ exposed warelength
Reflectance
≥ 20 % @ exposed warelength
Defect
None ≥ 0.5 ㎛
Resist E-beam Resist Thickness 3000 ~ 4000 Å
Optic Resist Thickness
4650 Å


FPD Blankmask
Category
Specification
Substrate
Size
330 x 450 x 6 mm ~ 1220 x 1400 x 13 mm
Transmittance
Not less than 85 % @ 200 nm
Not less than 90 % @ 230 ~ 260nm
Shielding Layer Thickness
1100 ± 50 Å
Optical Density ≥ 3.0 @ exposed warelength
Reflectance
≥ 20 % @ exposed warelength
Defect
None ≥ 30 ㎛
Resist E-beam Resist Thickness 3000 ~ 4000 Å
Optic Resist Thickness
10000 Å