Business·Tech
The Three Core Elements of an EUV Blankmask
An extreme ultraviolet (EUV) lithography Blankmask consists of three core elements: the substrate (LTEM), the multilayer reflector (Multilayer), and the absorber (Absorber). S&S Tech researches and develops the core technologies spanning all of these components.
LTEM Substrate
A substrate with a near-zero coefficient of thermal expansion that eliminates position error caused by thermal expansion.
Multilayer
A Bragg Mirror formed by repeating a low-/high-refractive-index pair 40 times to reflect more than 60% of the EUV wavelength.
Absorber
A thin film that forms a dark field to encode pattern information onto the lithography light.
Key EUV R&D Achievements & Status
We carry out phased development to secure core extreme ultraviolet (EUV) technologies, advancing our material, process, and inspection technologies and driving their industrial application.
| Project | Development Goal | Period | Role |
|---|---|---|---|
| Development of Blankmask Technology for Extreme Ultraviolet (EUV) Lithography | Development of all EUV BIM components, including the substrate (LTEM), Multilayer, and Absorber | 2020~2025 | Lead Organization |
| Development of Large-Area Blankmask Absorber Technology for Sub-5nm Nodes | Development of mass-production technology for EUV Blankmask absorber materials | 2023~2024 | Participating Contractor |
| Development of Reflective-Coating Equipment and Process Technology for Extreme Ultraviolet Mirrors | Evaluation and development of EUV Mirror (Multilayer) process technology | 2024~2028 | Participating End-User Company |
| Development and Demonstration of AI-Based Quality Inspection Technology for EUV Mask Defect Inference and Classification | Development of AI-based defect detection technology for EUV Blankmask | 2025~2028 | Lead Organization |
| Development of EUV-Compatible Hard-Mask Phase-Shift Blankmask Technology for Manufacturing Logic Semiconductor Devices Below 3nm | Development of EUV HM-PSM | 2025~2028 | Lead Organization |
EUV R&D in Detail
Technology overview, development goals, and detailed activities for each national R&D project.
Development of Blankmask Technology for Extreme Ultraviolet Lithography
Development of core EUV Blankmask element technologies spanning the substrate (LTEM), Multilayer, and Absorber
Development of Large-Area Blankmask Absorber Technology for Sub-5nm Nodes
Realizing a high-performance absorber for Sub-5nm processes by developing large-area and mass-production process technology for absorber materials
Development and Demonstration of AI-Based Quality Inspection Technology for EUV Mask Defect Inference and Classification
Establishing a quality assurance system for EUV Blankmask through AI-based inspection automation and reduced false detection
Development of EUV HM-PSM Technology for Manufacturing Logic Semiconductor Devices Below 3nm
Securing the material, process, and evaluation technology of hard-mask phase-shift Blankmask and strengthening the foundation for EUV mask self-reliance
